SK HYNIX NAND Flash Memory—E3NAND
關(guān)鍵字: E3NAND SK HYNIX NAND Flash Memory—E3NAND
PRODUCT | TECH. | DENSITY | VCC / ORG | PKG. |
H2JTCG8T21BMR | 1xnm | 64Gb | 3.3V / x8 | WLGA |
H2JTDG8UD1BMR | 1xnm | 128Gb | 3.3V / x8 | WLGA |
H2JTEG8VD1BMR | 1xnm | 256Gb | 3.3V / x8 | WLGA |
H2JTFG8YD1BMR | 1xnm | 512Gb | 3.3V / x8 | WLGA |
H2JTDG8UD1BMS | 1xnm | 128Gb | 3.3V / x8 | WLGA |
H2JTEG8VD1BMS | 1xnm | 256Gb | 3.3V / x8 | WLGA |
H2JTFG8YD1BMS | 1xnm | 512Gb | 3.3V / x8 | WLGA |
H2JTCG8T21CMR | 1xnm | 64Gb | 3.3V / x8 | WLGA |
H2JTDG8UD1CMR | 1xnm | 128Gb | 3.3V / x8 | WLGA |
H2JTEG8VD1CMR | 1xnm | 256Gb | 3.3V / x8 | WLGA |
H2JTFG8YD1CMR | 1xnm | 512Gb | 3.3V / x8 | WLGA |
H2JTDG8UD1CMS | 1xnm | 128Gb | 3.3V / x8 | WLGA |
H2JTEG8VD1CMS | 1xnm | 256Gb | 3.3V / x8 | WLGA |
H2JTFG8YD1CMS | 1xnm | 512Gb | 3.3V / x8 | WLGA |
H2JTFG8PD1MMR | 1xnm | 512Gb | 3.3V / x8 | WLGA |
H2JT1T8QD1MMR | 1xnm | 1024Gb | 3.3V / x8 | WLGA |
H2JTFG8PD1MMS | 1xnm | 512Gb | 3.3V / x8 | WLGA |
H2JT1T8QD1MMS | 1xnm | 1024Gb | 3.3V / x8 | WLGA |
H2JTDG8UD1CMR | 1ynm | 128Gb | 3.3V / x8 | WLGA |
H2JTEG8VD1CMR | 1ynm | 256Gb | 3.3V / x8 | WLGA |
H2JTDG8UD1CMS | 1ynm | 128Gb | 3.3V / x8 | WLGA |
H2JTEG8VD1CMS | 1ynm | 256Gb | 3.3V / x8 | WLGA |
H2JTFG8PD1MMR | 1ynm | 512Gb | 3.3V / x8 | WLGA |
H2JT1T8QD1MMR | 1ynm | 1024Gb | 3.3V / x8 | WLGA |
H2JTFG8PD1MMS | 1ynm | 512Gb | 3.3V / x8 | WLGA |
H23QDG8UD1ACS | 1ynm | 128Gb | 3.3V / x8 | WLGA |
H23QFG8YK1ACS | 1ynm | 512Gb | 3.3V / x8 | WLGA |
H23QFG8PG1MCS | 1ynm | 512Gb | 3.3V / x8 | WLGA |
H23Q1T8QK1MYS | 1ynm | 1024Gb | 3.3V / x8 | WLGA |
H23QEG8VG1ACR | 1ynm | 256Gb | 3.3V / x8 | WLGA |
H23Q1T8QK1MYR | 1ynm | 1024Gb | 3.3V / x8 | WLGA |
編輯:admin 最后修改時(shí)間:2023-03-02